FDMS1D2N03DSD

Manufacturer: onsemi
Category: FET, MOSFET Arrays

Description

PT11N 30/12 & PT11N 30/12

Technical Parameters

Parameter Value
Product Status Obsolete
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual) Asymmetrical
FET Feature -
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 19A (Ta), 70A (Tc), 37A (Ta), 164A (Tc)
Rds On (Max) @ Id, Vgs 3.25mOhm @ 19A, 10V, 0.97mOhm @ 37A, 10V
Vgs(th) (Max) @ Id 2.5V @ 320μA, 3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 33nC @ 10V, 117nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1410pF @ 15V, 4860pF @ 15V
Power - Max 2.1W (Ta), 26W (Tc), 2.3W (Ta), 42W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-PowerWDFN
Supplier Device Package 8-PQFN (5x6)

Industry News