NXV08H350XT1

Manufacturer: onsemi
Category: FET, MOSFET Arrays

Description

IC

Technical Parameters

Parameter Value
Product Status Active
Technology MOSFET (Metal Oxide)
Configuration -
FET Feature -
Drain to Source Voltage (Vdss) 80V
Current - Continuous Drain (Id) @ 25°C -
Rds On (Max) @ Id, Vgs 0.762mOhm @ 160A, 12V
Vgs(th) (Max) @ Id 4.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 320nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 24350pF @ 40V
Power - Max -
Operating Temperature -40°C ~ 125°C (TA)
Mounting Type Through Hole
Package / Case 17-PowerDIP Module (1.390", 35.30mm)
Supplier Device Package APM17-MDC

Industry News